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MJE271

Transistors Bipolar (BJT) 2A 100V Bipolar

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SeekIC No. : 00215269 Detail

MJE271: Transistors Bipolar (BJT) 2A 100V Bipolar

MJE271 Data Sheet

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Part Number:
MJE271
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 2 A
DC Collector/Base Gain hfe Min : 500 at 20 mA at 3 V Configuration : Single
Maximum Operating Frequency : 6 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-225
Packaging : Bulk    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Packaging : Bulk
Maximum DC Collector Current : 2 A
Package / Case : TO-225
DC Collector/Base Gain hfe Min : 500 at 20 mA at 3 V
Maximum Operating Frequency : 6 MHz (Min)


Parameters:

Technical/Catalog InformationMJE271
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP - Darlington
Voltage - Collector Emitter Breakdown (Max)100V
Current - Collector (Ic) (Max)2A
Power - Max15W
DC Current Gain (hFE) (Min) @ Ic, Vce500 @ 20mA, 3V
Vce Saturation (Max) @ Ib, Ic2V @ 200A, 20mA
Frequency - Transition6MHz
Current - Collector Cutoff (Max)1mA
Mounting TypeThrough Hole
Package / CaseTO-225-3
PackagingBulk
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJE271
MJE271



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