MJE271G, US $ .17-.33 , ON Semiconductor, MJE271G DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00205802 Detail

MJE271G: Transistors Bipolar (BJT) 2A 100V Bipolar Power PNP

MJE271G Data Sheet

US $ .17~.33 / Piece | Get Latest Price

Part Number:: MJE271G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	100 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	2 A
DC Collector/Base Gain hfe Min :	500 at 20 mA at 3 V	Configuration :	Single
Maximum Operating Frequency :	6 MHz (Min)	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-225
Packaging :	Bulk

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Packaging : Bulk
Maximum DC Collector Current : 2 A
Package / Case : TO-225
DC Collector/Base Gain hfe Min : 500 at 20 mA at 3 V
Maximum Operating Frequency : 6 MHz (Min)

Parameters:

Technical/Catalog Information	MJE271G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	2A
Power - Max	15W
DC Current Gain (hFE) (Min) @ Ic, Vce	500 @ 20mA, 3V
Vce Saturation (Max) @ Ib, Ic	2V @ 200A, 20mA
Frequency - Transition	6MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-225-3
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJE271G MJE271G

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MJE271G

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