MJE3055T

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
DC Collector/Base Gain hfe Min : 20
Maximum Operating Frequency : 2 MHz (Min)
Package / Case : TO-220
Maximum DC Collector Current : 10 A


Description

Complementary,MJE3055T has  high power transistors in a plastic envelope, primarily for use in audio and general purpose

Parameters:

Technical/Catalog Information	MJE3055T
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	10A
Power - Max	75W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 4A, 4V
Vce Saturation (Max) @ Ib, Ic	1.1V @ 400mA, 4A
Frequency - Transition	2MHz
Current - Collector Cutoff (Max)	700A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJE3055T MJE3055T 497 2573 5 ND 49725735ND 497-2573-5