MJF3055

Transistors Bipolar (BJT) 10A 90V 30W NPN

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SeekIC No. : 00213338 Detail

MJF3055: Transistors Bipolar (BJT) 10A 90V 30W NPN

floor Price/Ceiling Price

Part Number:
MJF3055
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 90 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 10 A
DC Collector/Base Gain hfe Min : 20 Configuration : Single
Maximum Operating Frequency : 2 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220 Full-Pak
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
DC Collector/Base Gain hfe Min : 20
Maximum Operating Frequency : 2 MHz (Min)
Maximum DC Collector Current : 10 A
Collector- Emitter Voltage VCEO Max : 90 V
Package / Case : TO-220 Full-Pak


Application

• Isolated Overmold Package (1500 Volts RMS Min)
• Electrically Similar to the Popular MJE3055T and MJE2955T
• CollectorEmitter Sustaining Voltage - VCEO(sus) 90 Volts
• 10 Amperes Rated Collector Current
• No Isolating Washers Required
• Reduced System Cost
• UL Recognized, File #E69369, to 3500 VRMS Isolation



Specifications

Rating
Symbol
MJF31C
MJF32C
Unit
CollectorEmitter Voltage
VCEO(SUS)
90
Vdc
CollectorBase Voltage
VCES
90
Vdc
EmitterBase Voltage
VEBO

5

Vdc
Collector Current - Continuous
IC
10
Adc
Base Current - Continuous
IB
6
Adc
RMS Isolation Voltage (3) Test No. 1 Per Fig. 4
(for 1 sec, R.H. < 30%, Test No. 2 Per Fig. 5
TA = 25) Test No. 3 Per Fig. 6
VISOL
4500
3500
1500
VRMS
Total Power Dissipation @ TC = 25
Derate Above 25
PD
30
0.25
Watts
W/
Total Power Dissipation @ TC = 25
Derate Above 25
PD
2
0.016
Watts
W/
Operating and Storage Junction Temperature Range
TJ, Tstg
55 to +150



Parameters:

Technical/Catalog InformationMJF3055
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)90V
Current - Collector (Ic) (Max)10A
Power - Max30W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A, 4V
Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 4A
Frequency - Transition2MHz
Current - Collector Cutoff (Max)1A
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJF3055
MJF3055
MJF3055OS ND
MJF3055OSND
MJF3055OS



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