MJH6287

Transistors Darlington 20A 100V Bipolar

product image

MJH6287 Picture
SeekIC No. : 00217858 Detail

MJH6287: Transistors Darlington 20A 100V Bipolar

floor Price/Ceiling Price

Part Number:
MJH6287
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Configuration : Single Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 100 V Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V Maximum DC Collector Current : 20 A
Maximum Collector Cut-off Current : 1000 uA Power Dissipation : 160 W
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : SOT-93 Packaging : Tube    

Description

Transistor Polarity : PNP
Mounting Style : Through Hole
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V
Maximum Operating Temperature : + 150 C
Maximum Collector Cut-off Current : 1000 uA
Maximum DC Collector Current : 20 A
Power Dissipation : 160 W
Package / Case : SOT-93


Application

• Similar to the Popular NPN 2N6282, 2N6283, 2N6284 and the PNP 2N6285, 2N6286, 2N6287
• Rugged RBSOA Characteristics
• Monolithic Construction with Builtin CollectorEmitter Diode



Specifications

Rating
Symbol
MJH6282
MJH6285
MJH6283
MJH6286
MJH6284
MJH6287
Unit
CollectorEmitter Voltage
VCEO
60
80
100
Vdc
CollectorBase Voltage
VCB
60
80
100
Vdc
EmitterBase Voltage
VEB

5.0

Vdc
Collector Current - Continuous
- Peak
IC
20
40
Adc
Base Current
IB
0.5
Adc
Total Power Dissipation @ TC = 25
Derate Above 25
PD
160
1.28
Watts
W/
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to +150



Parameters:

Technical/Catalog InformationMJH6287
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP - Darlington
Voltage - Collector Emitter Breakdown (Max)100V
Current - Collector (Ic) (Max)20A
Power - Max160W
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 10A, 3V
Vce Saturation (Max) @ Ib, Ic2V @ 40mA, 10A
Frequency - Transition4MHz
Current - Collector Cutoff (Max)1mA
Mounting TypeThrough Hole
Package / CaseSOT-93, TO-218 (Straight Leads)
PackagingTube
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MJH6287
MJH6287
MJH6287OS ND
MJH6287OSND
MJH6287OS



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
LED Products
Static Control, ESD, Clean Room Products
Crystals and Oscillators
RF and RFID
Discrete Semiconductor Products
Power Supplies - External/Internal (Off-Board)
View more