Series: -
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
Transistor Type: PNP
Mounting Type: Through Hole
Current - Collector Cutoff (Max): 100µA
Voltage - Collector Emitter Breakdown (Max): 250V
Packaging: Tube
Manufacturer: ON Semiconductor
Frequency - Transition: 4MHz
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264
Current - Collector (Ic) (Max): 16A
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Power - Max: 200W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Application• Total Harmonic Distortion Characterized
• High DC Current Gain hFE = 25 Min @ IC = 8 Adc
• Excellent Gain Linearity
• High SOA: 2.50 A, 80 V, 1 SecondSpecifications
|
Rating |
Symbol |
Value
|
Unit |
| CollectorEmitter Voltage |
VCEO |
250 |
Vdc |
| CollectorBase Voltage |
VCBR |
400 |
Vdc |
| EmitterBase Voltage |
VEBO |
|
Vdc |
| CollectorEmitter Voltage - 1.5 V |
VCEX |
400 |
Vdc |
|
Collector Current - Continuous
- Peak (1) |
IC |
16
30
|
Adc |
| Base Current - Continuous |
IB
|
5 |
Adc |
Total Power Dissipation @ TC = 25
Derate Above 25 |
PD |
200
1.43
|
Watts
W/ |
| Operating and Storage Junction Temperature Range |
TJ, Tstg |
65 to +150 |
|
Parameters: | Technical/Catalog Information | MJL21195 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 250V |
| Current - Collector (Ic) (Max) | 16A |
| Power - Max | 200W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 8A, 5V |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 800mA, 8A |
| Frequency - Transition | 4MHz |
| Current - Collector Cutoff (Max) | 100A |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-3BPL |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MJL21195
MJL21195
MJL21195OS ND
MJL21195OSND
MJL21195OS
|
MJL21195 Data Sheet
