MJL3281A

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Packaging : Tube
Emitter- Base Voltage VEBO : 7 V
Maximum DC Collector Current : 15 A
Maximum Operating Frequency : 30 MHz
DC Collector/Base Gain hfe Min : 60
Collector- Emitter Voltage VCEO Max : 200 V
Package / Case : TO-3BPL


Features:

• The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications.
• Designed for 100 W Audio Frequency
• Gain Complementary: - Gain Linearity from 100 mA to 7 A - High Gain - 60 to 175 - hFE = 45 (Min) @ IC = 8 A
• Low Harmonic Distortion
• High Safe Operation Area - 1 A/100 V @ 1 sec
• High fT - 30 MHz Typical


Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Voltage	VCEO	200	Vdc
CollectorBase Voltage	VCBR	200	Vdc
EmitterBase Voltage	VEBO	7	Vdc
CollectorEmitter Voltage - 1.5 V	VCEX	200	Vdc
Collector Current - Continuous - Peak (1)	IC	15 25 15	Adc
Base Current - Continuous	IB	1.5	Adc
Total Power Dissipation @ TC = 25 Derate Above 25	PD	200 1.43	Watts W/
Operating and Storage Junction Temperature Range	TJ, Tstg	65 to +150

Parameters:

Technical/Catalog Information	MJL3281A
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	260V
Current - Collector (Ic) (Max)	15A
Power - Max	180W
DC Current Gain (hFE) (Min) @ Ic, Vce	75 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic	1V @ 500mA, 5A
Frequency - Transition	30MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-264
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MJL3281A MJL3281A MJL3281AOS ND MJL3281AOSND MJL3281AOS