Purchase MMBD717AW, In-stock MMBD717AW From SeekIC.
- Table of contents:
MMBD717AW
-
Suppliers
DataSheet
General Description
MMBD717AW Maximum Ratings
|
Characteristic |
Symbol |
Value |
Unit |
| Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRM VRWM VR |
20 |
V |
| Forward Continuous Current (Note 1) |
IF |
200 |
mA |
| Forward Surge Current (Note 1) @ t < 1.0s |
IFSM |
600 |
mA |
| Power Dissipation (Note 1) |
Pd |
200 |
mW |
| Typical Thermal Resistance, Junction to Ambient Air (Note 1) |
RJA |
625 |
/W |
| Operating and Storage Temperature Range |
Tj, TSTG |
-55 to +150 |
MMBD717AW Features
` Low Turn-on Voltage
` Fast Switching
` PN Junction Guard Ring for Transient and ESD Protection
` Designed for Surface Mount Application
` Plastic Material UL Recognition Flammability Classification 94V-O
` Fast Switching
` PN Junction Guard Ring for Transient and ESD Protection
` Designed for Surface Mount Application
` Plastic Material UL Recognition Flammability Classification 94V-O
MMBD717AW Connection Diagram
MMBD717AW-T1
PDF/DataSheet Download
- Datasheet: MMBD717AW-T1
- File Size: 46276 KB
- Manufacturer: WTE [Won-Top Electronics]
- Click here to Download
- ·MMB3904LT1
- LRC [Leshan Radio Company]
- General Purpose Transistor(NPN Silicon)
- 271469 KB
- ·MMBA811C5
- SAMSUNG [Samsung semiconductor]
- PNP (DRIVER TRANSISTOR)
- 28066 KB
- ·MMBA811C6
- SAMSUNG [Samsung semiconductor]
- PNP EPITAXIAL SILICON TRANSISTOR
- 27375 KB
- ·MMBA811C7
- SAMSUNG [Samsung semiconductor]
- PNP (DRIVER TRANSISTOR)
- 28474 KB
- ·MMBA811C8
- SAMSUNG [Samsung semiconductor]
- PNP (DRIVER TRANSISTOR)
- 26290 KB
- ·MMBA812M3
- SAMSUNG [Samsung semiconductor]
- PNP (GENERAL PURPOSE TRANSISTOR)
- 25792 KB
- ·MMBA812M4
- SAMSUNG [Samsung semiconductor]
- PNP (GENERAL PURPOSE TRANSISTOR)
- 26629 KB
- ·MMBA812M5
- SAMSUNG [Samsung semiconductor]
- PNP (GENERAL PURPOSE TRANSISTOR)
- 25624 KB
MMBD717AW Relative Products
MMBD717A
MMBD717
MMBD701LT1G
The MMBD701LT1G is one member of the MMBD701LT1 family which is designed as the 70 volts highvoltage silicon hotcarrier detector and switching diodes that is readily adaptable to many other fast switching RF and digital applications. And this device is suppl...
MMBD701LT1
MMBD701
MMBD7000W
Hotspot Suppliers Product
MCF5272VF66
Price: 8-9 USD
external bus interface, programmable circuits, System Integration Module
k4H511638D-UCB3
Price: 1-10 USD
512Mb, D-die DDR SDRAM, TSOP
H30R1202
Price: 2.18-2.38 USD
Reverse Conducting IGBT, TO-247, monolithic body diode, 1200V, 90A, low forward voltage
AN7523N
Price: 0.65-0.8 USD
BTL, Audio Power IC, ZIP, Built-in standby function, DC volume circuit, 3.0V to 13.5V
RHP-122+
Price: 0.56-0.74 USD
RHP-122+, SMD, Integrated Circuits
EKMM161VSN122MR35S
Price: 0.01-100 USD
large capacitance, aluminum electrolytic capacitor, 1200 uF, 160V, Non solvent-proof type
PIC16F876A-I/SO
Price: 1.9-2 USD
Enhanced Flash Microcontroller, SOIC28, Two analog comparators, PIC16F876A-I/SO
AD8315ARMZ
Price: 0.1-4 USD
subsystem, SOP, 5.5 V
RTC-4543SA
Price: 1.1-1.6 USD
SOP-14, serial-interface, real time clock module, 32.768 kHz , 2.5 V to 5.5 V, 1.4 V to 5.5 V
IDT7164S70DB
Price: 10.05-14.5 USD
65,536 bit high-speed static RAM, CDIP28, 50mA, –0.5 to +7.0V, Three-state outputs, Low power cons...
XC2VP7-FFGG456C
Price: 30-80 USD
XC2VP7-FFGG456C, BGA
TEA1063
Price: 1-10 USD
TEA1063 Low Voltage Versatile Telephone Transmission Circuit DIP
