MMBT5551-7-F, US $ .06-.26 , Diodes Inc., MMBT5551-7-F DataSheet download, circuit diagram from SeekIC.com

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MMBT5551-7-F: Transistors Bipolar (BJT) SS NPN 300mW

MMBT5551-7-F Data Sheet

US $ .06~.26 / Piece | Get Latest Price

Part Number:: MMBT5551-7-F
Mfg:: Diodes Inc.
Supply Ability:: 5000

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$.06

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Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	160 V
Emitter- Base Voltage VEBO :	6 V	Maximum DC Collector Current :	0.6 A
DC Collector/Base Gain hfe Min :	80	Configuration :	Single
Maximum Operating Frequency :	300 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	SMD/SMT	Package / Case :	SOT-23
Packaging :	Reel

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Maximum Operating Frequency : 300 MHz
Package / Case : SOT-23
Collector- Emitter Voltage VCEO Max : 160 V
DC Collector/Base Gain hfe Min : 80
Maximum DC Collector Current : 0.6 A

Parameters:

Technical/Catalog Information	MMBT5551-7-F
Vendor	Diodes Inc
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	160V
Current - Collector (Ic) (Max)	200mA
Power - Max	300mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	150mV @ 1mA, 10mA
Frequency - Transition	300MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, Micro3?, SSD3, SST3
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MMBT5551 7 F MMBT55517F MMBT5551 FDITR ND MMBT5551FDITRND MMBT5551-FDITR

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MMBT5551-7-F

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