MMBTH24

Configuration : Single
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Packaging : Reel
Package / Case : SOT-23
Power Dissipation : 225 mW
Continuous Collector Current : 0.05 A
Emitter- Base Voltage VEBO : 4 V
Maximum Operating Frequency : 400 MHz
Collector- Emitter Voltage VCEO Max : 30 V


Specifications

Symbol	Parameter	Value	Units
VCEO	CollectorEmitter Voltage	30	V
VCEO	CollectorBase Voltage	40	V
VCEO	EmitterBase Voltage	4.0	V
IC	Collector current - Continuous	50	mA
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 ~ +150

*These ratings are limiting values above which the serviceability of any semiconductor device may
be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed
or low duty cycle operations

Part Number	MMBTH24
Product Type	NPN
VCEO (V)	40
IC(A)	0.05
ICM (A)	-
PD (W)	0.3
hFE Min	30
hFE Max	-
@I C (A)	0.008
VCE(SAT) Max (mV)	500
@ IC (A)	0.004
@ IB (mA)	0.4
fT Min (MHz)	400
RCE (SAT) (m)	-

Description

This MMBTH24 is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 A to 20 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47. See MPSH11 for characteristics.

Parameters:

Technical/Catalog Information	MMBTH24
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Frequency - Transition	400MHz
Noise Figure (dB Typ @ f)	-
Current - Collector (Ic) (Max)	50mA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 8mA, 10V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Gain	-
Power - Max	225mW
Compression Point (P1dB)	-
Package / Case	SOT-23
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MMBTH24 MMBTH24 MMBTH24FS ND MMBTH24FSND MMBTH24FS