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Part Number: MMBZ15VDLT1

 

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D/C: 06+

Description: These dual monolithic silicon zener diodes are designed for applications requiring transient overvolta...


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MMBZ15VDLT1 General Description


These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common cathode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium.

MMBZ15VDLT1 Maximum Ratings

Rating Symbol Value Unit
Peak Power Dissipation @ 1.0 ms (Note 1.) @ TL 25°C Ppk 40 Watts
Total Power Dissipation on FR5 Board (Note 2.) @ TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
PD

RJA
225
1.8
556
mW
mW/°C
°C/W
Total Power Dissipation on Alumina Substrate (Note 3.) @ TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
PD

RJA
300
2.4
417
mW
mW/°C
°C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
Lead Solder Temperature Maximum (10 Second Duration) TL 230 °C

1. Nonrepetitive current pulse per Figure 5. and derate above TA = 25°C per Figure 6.
2. FR5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina

MMBZ15VDLT1 Features

• SOT23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration
• Working Peak Reverse Voltage Range 12.8 V, 22 V
• Standard Zener Breakdown Voltage Range 15 V, 27 V
• Peak Power 40 Watts @ 1.0 ms (Bidirectional), per Figure 5. Waveform
• ESD Rating of Class N (exceeding 16 kV) per the Human Body Model
• Maximum Clamping Voltage @ Peak Pulse Current
• Low Leakage < 100 nA
• Flammability Rating UL 94VO

MMBZ15VDLT1 datasheet

MMBZ15VDLT1
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