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MFG:CH  Package Cooled:DIP  D/C:07+  

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Part Number: MMDF3N02HD

 

MFG: CH

Package Cooled: DIP

D/C: 07+

Description: MiniMOSE devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HD...


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MMDF3N02HD General Description


MiniMOSE devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process.These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical appli cations are dcdc converters, and power management in portable and battery powered products such as computers,printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Miniature SO8 Surface Mount Package - Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SO8 Package Provided

MMDF3N02HD Maximum Ratings

Rating
Symbol
Value
Units
DraintoSource Voltage
VDSS
20
V
DraintoGate Voltage (RGS = 1.0 M)
VDGR
20
V
GatetoSource Voltage - Continuous
VGS
±20
V
Drain Current - Continuous @ TA = 25°C
Drain Current - Continuous @ TA = 100°C
Drain Current - Single Pulse (tp 10s)
ID
ID
IDM
3.8
2.6
19
Adc

Apk
Operating and Storage Temperature Range
TJ,Tstg
55 to 150
°C
Total Power Dissipation @ TA = 25°C(1)
PD
2.0
W
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 20 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 )
EAS
405
mJ
Thermal Resistance Junction to Ambient (1)
RJA
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds
TL
260
°C
(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%.

MMDF3N02HD Connection Diagram

MMDF3N02HD  Connection Diagram

MMDF3N02HD datasheet

MMDF3N02HD
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