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Part Number: MMDF3P03HD

 

 

 

 

Description: Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density...


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MMDF3P03HD General Description


Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density TMOS process. Dual HDTMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.

• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Miniature SO8 Surface Mount Package - Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Mounting Information for SO8 Package Provided

MMDF3P03HD Maximum Ratings

Rating
Symbol
Value
Units
DraintoSource Voltage
VDSS
30
V
GatetoSource Voltage - Continuous
VGS
±20
V
Drain Current - Continuous @ TA = 25°C
Drain Current - Single Pulse (tp 10s)
ID
IDM
3.0
15
Adc
Apk
Operating and Storage Temperature Range
TJ,Tstg
55 to 150
°C
Total Power Dissipation @ TA = 25°C(1)
PD
2.0
W
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 )
EAS
450
mJ
Thermal Resistance Junction to Ambient
RJA
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from Case for 10 sec.
TL
260
°C
(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%.

MMDF3P03HD Connection Diagram

MMDF3P03HD Connection Diagram

MMDF3P03HD datasheet

MMDF3P03HD
PDF/DataSheet Download

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