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Part Number: MMDF4207

 

 

 

 

Description: MiniMOSE devices are an advanced series of power MOSFETs which utilize Motorola's latest MOSFET techno...


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MMDF4207 General Description


MiniMOSE devices are an advanced series of power MOSFETs which utilize Motorola's latest MOSFET technology process to achieve the lowest possible onresistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. MiniMOSE devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life in Portable Applications
• Characterized Over a Wide Range of Power Ratings
• Logic Level Gate Drive - Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, with Soft Recovery
• IDSS Specified at Elevated Temperature
• Miniature SO8 Surface Mount Package -Saves Board Space

MMDF4207 Maximum Ratings

Characteristics
Symbol
Maximum
Unit
DraintoSource Voltage
DraintoGate Voltage (RGS = 1.0 M)
GatetoSource Voltage - Continuous
VDSS
VDGR
VGS
20
12
±12
V
1 Inch Square @
10 seconds on
FR4 or G10 PCB		 Thermal Resistance - Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current - Continuous @ TA = 25°C
Drain Current - Continuous @ TA = 70°C
Drain Current - Pulsed Drain Current (1)
RTHJA
PD

ID
ID
IDM
62.5
2.0
16
7.8
5.7
40
°C/W
Watts
mW/°C
A
A
A
1 Inch Square @
Steady State on
FR4 or G10 PCB		 Thermal Resistance - Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current - Continuous @ TA = 25°C
Drain Current - Continuous @ TA = 70°C
Drain Current - Pulsed Drain Current (1)
RTHJA
PD

ID
ID
IDM
98
1.28
10.2
6.2
4.6
35
°C/W
Watts
mW/°C
A
A
A
Minimum Pad @
Steady State on
FR4 or G10 PCB		 Thermal Resistance - Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current - Continuous @ TA = 25°C
Drain Current - Continuous @ TA = 70°C
Drain Current - Pulsed Drain Current (1)
RTHJA
PD
ID
ID
IDM
166
0.75
6.0
4.8
3.5
30
°C/W
Watts
mW/°C
A
A
A
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 5.0 Apk, L = 40 mH, RG = 25 )
EAS
500
mJ
(1) Repetitive rating; pulse width limited by maximum junction temperature.

MMDF4207 Connection Diagram

MMDF4207 Connection Diagram

MMDF4207 datasheet

MMDF4207
PDF/DataSheet Download

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