Purchase MMDFS6N303, In-stock MMDFS6N303 From SeekIC.
Part Number: MMDFS6N303
Description: The FETKYE product family incorporates low RDS(on), true logic level MOSFETs packaged with industry le...
- Table of contents:
MMDFS6N303
-
Suppliers
DataSheet
General Description
MMDFS6N303 General Description
The FETKYE product family incorporates low RDS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration. Independent pinouts for TMOS and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications such as Buck Converter,BuckBoost, Synchronous Rectification, Low Voltage Motor Control, and Load Management in Battery Packs, Chargers, Cell Phones and other Portable Products.
• HDTMOS Power MOSFET with Low VF
• Lower Component Placement and Inventory Costs along with Board Space Savings
• Logic Level Gate Drive - Can be Driven by Logic ICs
• Mounting Information for SO8 Package Provided
• Applications Information Provided
• R2 Suffix for Tape and Reel (2500 units/13, reel)
• Marking: 6N303
MMDFS6N303 Maximum Ratings
|
Rating |
Symbol |
Value |
Units |
| DraintoSource Voltage |
VDSS |
30 |
V |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
30 |
V |
| GatetoSource Voltage - Continuous |
VGS |
±20 |
V |
| Drain Current - Continuous @ TA = 25°C Drain Current - Single Pulse (tp 10s) |
ID IDM |
6.0 30 |
Adc Apk |
| Total Power Dissipation @ TA = 25°C (2) |
PD |
2.0 |
W |
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 ) |
EAS |
325 |
mJ |
MMDFS6N303 Connection Diagram
MMDFS6N303
PDF/DataSheet Download
- Datasheet: MMDFS6N303
- File Size: 262665 KB
- Manufacturer: ON SEMICONDUCTOR
- Click here to Download
- ·MMDD110T1
- SCHOTTKY BARRLER DLODES
- 157687 KB
- ·MMDF1300
- ONSEMI [ON Semiconductor]
- Power MOSFET 3 Amps, 25 Volts
- 45129 KB
- ·MMDF1300R2
- ONSEMI [ON Semiconductor]
- Power MOSFET 3 Amps, 25 Volts
- 45129 KB
- ·MMDF1N05E
- MOTOROLA [Motorola, Inc]
- DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM
- 173630 KB
- ·MMDF1N05E/D
- Medium Power Surface Mount Products
- 150713 KB
- ·MMDF2C01HD
- MOTOROLA [Motorola, Inc]
- COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS
- 381056 KB
- ·MMDF2C01HD/D
- Medium Power Surface Mount Products
- 321511 KB
- ·MMDF2C02E
- MOTOROLA [Motorola, Inc]
- COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS
- 333384 KB
MMDFS6N303 Relative Products
MMDFS3P303
The MMDFS3P303 FETKY product family incorporates low RDS(on), MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration. Independent pinouts for MMDFS...
MMDFS2P102
The MMDFS2P102 FETKYE product family incorporates low RDS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration. Independent...
MMDF6N03HD
MMDF6N03HD Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola!fls High Cell Density TMO process. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. MMDF6N03HD Dual HDTMOS devices are de...
MMDF6N02HD
MMDF6N02HD Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola!fls High Cell Density TMO process. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. MMDF6N02HD Dual HDTMOS devices are de...
MMDF5N02Z
MMDF5N02Z EZFETsTM are an advanced series of power MOSFETs which utilize Motorola!fls High Cell Density HDTMOS process and contai monolithic back-Cto-Cback zener diodes. These zener diod provide protection against ESD and unexpected transients. These MMDF5N0...
MMDF4P03HD
MMDF4P03HD Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density TMOS process. Dual HDTMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Ty...
Hotspot Suppliers Product
RTL8306G
Price: 0.01-0.02 USD
highly integrated layer, 2 single chip, switch controller, SMD, -0.5 to +4.0 V, 0.5 to Vcc V
AD8314ARMZ
Price: 0.75-0.9 USD
IC RF DETECTOR/CTRLR 8-MSOP - AD8314ARMZ
AJ65BTB2-16T
Price: 165-185 USD
AJ65BTB2 16T | MITSUBISHI Transistor Output Module
HFA08PB120PBF
Price: 1.85-2 USD
ultrafast soft recovery diode, 1200 V, 8 A, Very low IRRM, Ultrasoft recovery
M51953BFP
Price: 1.1-1.3 USD
semiconductor integrated circuit, SOP-8, 18 V, 6 mA, Low threshold operating voltage
HU2G471MCZS5WPEC
Price: 2-2.2 USD
snap mount type, aluminum electrolytic capacitor, 200 to 450VDC, 3mA, etched foil technology
AM29F200BT-90SI
Price: 1-1.35 USD
5.0 Volt, Flash memory, TSOP
DCV010505P-U
Price: 8-12 USD
IC ISOLATED 5V 0.2A 74SOP - DCV010505P-U
TEA2025B
Price: 1-10 USD
DIP, STEREO AUDIO AMPLIFIER, 3V, soft clipping, 1.5A, TEA2025B
MC-146(32.768KHZ 12.5PF 20PPM)
Price: 0.15-0.2 USD
SMD, 32.768KHZ, 12.5PF, 20PPM, kHz range, crystal unit, Epson ToYoCom
NC7SZ32
Price: 0.1-100 USD
Tiny Logic UHS, 2 Input, OR Gate, SMD, 1.65V to 5.5V operating range, -0.5V to +6V Supply Voltage
TPME477K010R0023
Price: 0.05-0.08 USD
tantalum ultra low ESR capacitor, 470UF 10V 10%, SMD
