MMDT2222V-7, US $ .11-.31 , Diodes Inc., MMDT2222V-7 DataSheet download, circuit diagram from SeekIC.com

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MMDT2222V-7: Transistors Bipolar (BJT) NPN BIPOLAR

MMDT2222V-7 Data Sheet

US $ .11~.31 / Piece | Get Latest Price

Part Number:: MMDT2222V-7
Mfg:: Diodes Inc.
Supply Ability:: 5000

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Features: ·Epitaxial Planar Die ·Construction Complementary PNP Type Available (MMDT2907A) ·Ultra-...
MMDT2222A-7 evaluate
Transistors Bipolar (BJT) 40V 200mW
MMDT2222A-7-F evaluate
US $.1 - .31 / Piece

Transistors Bipolar (BJT) 40V 200mW

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	40 V
Emitter- Base Voltage VEBO :	6 V	Maximum DC Collector Current :	0.6 A
DC Collector/Base Gain hfe Min :	35 at 100 uA at 10 V	Configuration :	Dual
Maximum Operating Frequency :	300 MHz (Min)	Maximum Operating Temperature :	+ 150 C
Mounting Style :	SMD/SMT	Package / Case :	SOT-563
Packaging :	Reel

Description

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Configuration : Dual
Collector- Emitter Voltage VCEO Max : 40 V
Maximum Operating Frequency : 300 MHz (Min)
Package / Case : SOT-563
Maximum DC Collector Current : 0.6 A
DC Collector/Base Gain hfe Min : 35 at 100 uA at 10 V

Parameters:

Technical/Catalog Information	MMDT2222V-7
Vendor	Diodes Inc (VA)
Category	Discrete Semiconductor Products
Transistor Type	2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	600mA
Power - Max	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Frequency - Transistion	300MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-563
Packaging	Digi-Reel?
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MMDT2222V 7 MMDT2222V7 MMDT2222VDIDKR ND MMDT2222VDIDKRND MMDT2222VDIDKR

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