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MPF960

MOSFET N-CH 60V 2A TO-92

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SeekIC No. : 003432723 Detail

MPF960: MOSFET N-CH 60V 2A TO-92

MPF960 Data Sheet

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Part Number:
MPF960
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/13

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Product Details

Quick Details

Series: - Manufacturer: ON Semiconductor
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Standard
Drain to Source Voltage (Vdss): 60V Continuous Drain Current : 2.1 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 2A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 1A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) @ Vgs: -
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 70pF @ 25V
Power - Max: 1W Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Power - Max: 1W
Gate Charge (Qg) @ Vgs: -
Current - Continuous Drain (Id) @ 25° C: 2A
Mounting Type: Through Hole
Packaging: Bulk
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92-3
Input Capacitance (Ciss) @ Vds: 70pF @ 25V
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Manufacturer: ON Semiconductor
Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 1A, 10V


Specifications

Rating
Symbol
MPF930
MPF960
MPF990
Unit
DrainSource Voltage
VDS
35
60
90
Vdc
DrainGate Voltage
VDG
35
60
90
Vdc
GateSource Voltage
- Continuous
- Nonrepetitive (tp 3 50 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current
Continuous(1)
Pulsed(2)
ID
IDM
2.0
3.0
Adc
Total Device Dissipation
@ TA = 25
Derate above 25
PD
1.0
8.0
Watts
mW/
Operating and Storage Junction
Temperature Range
TJ ,Tstg
55 to 150
Thermal Resistance
qJA
125



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