MPS6514

Maximum Operating Frequency :
DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-92
Maximum DC Collector Current : 0.1 A
Emitter- Base Voltage VEBO : 4 V
Packaging : Box
Collector- Emitter Voltage VCEO Max : 25 V


Features:

• This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier.





Specifications

Symbol	Parameter	Value	Units
VCEO	Collector-Emitter Voltage	25	V
VCBO	Collector-Base Voltage	40	V
VEBO	Emitter-Base Voltage	4.0	V
IC	Collector current - Continuous	200	mA
TJ, Tstg	Junction and Storage Temperature	-55 ~ +150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations




Parameters:

Technical/Catalog Information	MPS6514
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25V
Current - Collector (Ic) (Max)	200mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 2mA, 10V
Vce Saturation (Max) @ Ib, Ic	500mV @ 5mA, 50mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MPS6514 MPS6514