MPSA14

Transistor Polarity : NPN
Mounting Style : Through Hole
Configuration : Single
Maximum Operating Temperature : + 150 C
Maximum DC Collector Current : 0.5 A
Collector- Emitter Voltage VCEO Max : 30 V
Emitter- Base Voltage VEBO : 10 V
Maximum Collector Cut-off Current : 0.1 uA
Collector- Base Voltage VCBO : 30 V
Power Dissipation : 625 mW
Package / Case : TO-92
Packaging : Box


Features:

· High current (max. 500 mA)
· Low voltage (max. 30 V)
· High DC current gain (min. 10000).




Application

· High gain amplification.




Pinout






Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter	-	30	V
VCES	collector-emitter voltage	VBE = 0	-	30	V
VEBO	emitter-base voltage	open collector	-	10	V
IC	collector current (DC)		-	500	mA
ICM	peak collector current		-	1	A
IB	peak base current		-	100	mA
Ptot	total power dissipation	Tamb 25; note 1	-	500	mW
TSTG	Storage temperature		65	+150
Tj	junction temperature		-	150
Tamb	operating ambient temperature		-65	+150

Note
1. Transistor mounted on an FR4 printed-circuit board.




Description

NPN Darlington transistor in a TO-92; SOT54 plastic package. PNP complement: MPSA64.




Parameters:

Technical/Catalog Information	MPSA14
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	1.2A
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	10000 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 100A, 100mA
Frequency - Transition	125MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MPSA14 MPSA14