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MPSH17

Transistors Bipolar (BJT) NPN RF Transistor

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SeekIC No. : 00212560 Detail

MPSH17: Transistors Bipolar (BJT) NPN RF Transistor

MPSH17 Data Sheet

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Part Number:
MPSH17
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/1/27

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Product Details

Quick Details

Transistor Polarity : NPN Mounting Style : Through Hole
Package / Case : TO-92 Packaging : Bulk    

Description

Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Transistor Polarity : NPN
Mounting Style : Through Hole
Package / Case : TO-92
Packaging : Bulk


Specifications

Parameter
Symbol
Value
Units
CollectorEmitter Voltage
VCEO
15
Vdc
CollectorBase Voltage
VCEO
20
Vdc
EmitterBase Voltage
VCEO
3.0
Vdc
Total Device Dissipation @ TA = 25
Derate above 25
PD
350
2.81
mW
mW/
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150



Parameters:

Technical/Catalog InformationMPSH17
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Frequency - Transition800MHz
Noise Figure (dB Typ @ f)6dB @ 200MHz
Current - Collector (Ic) (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 5mA, 10V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Gain24dB
Power - Max350mW
Compression Point (P1dB)-
Package / CaseTO-92-3, TO-226AA (Straight Leads)
PackagingBulk
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MPSH17
MPSH17
MPSH17OS ND
MPSH17OSND
MPSH17OS



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