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MPSW51A

Transistors Bipolar (BJT) 1A 50V 1W PNP

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SeekIC No. : 00214452 Detail

MPSW51A: Transistors Bipolar (BJT) 1A 50V 1W PNP

MPSW51A Data Sheet

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Part Number:
MPSW51A
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/1/27

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 40 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 55 at 10 mA at 1 V Configuration : Single
Maximum Operating Frequency : 50 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Bulk    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum Operating Frequency : 50 MHz (Min)
Collector- Emitter Voltage VCEO Max : 40 V
Maximum DC Collector Current : 1 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 55 at 10 mA at 1 V


Specifications

Rating Symbol Value Unit
CollectorEmitter Voltage    MPSW51
                             MPSW51A		 VCES -30
-40		 Vdc
CollectorBase Voltage       MPSW51
                             MPSW51A		 VCBO -40
-50		 Vdc
EmitterBase Voltage VEBO -5.0 Vdc
Collector Current - Continuous IC -1000 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C		 PD 1.0
8.0		 Watts
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C		 PD 2.5
20		 Watts
mW/°C
Operating and Storage Junction
Temperature Range		 TJ, Tstg 55 to +150 °C



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