MRF19045

The MRF19045 is N-Channel Enhancement -Mode Lateral MOSFET. It is designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. It is suitable for TDMA, CDMA and multicarrier amplifier applications.

The features of MRF19045 can be summarized as:(1)Internally Matched for Ease of Use; (2)High Gain, High Efficiency and High Linearity; (3)Integrated ESD Protection; (4)Designed for Maximum Gain and Insertion Phase Flatness; (5)Excellent Thermal Stability; (6)Characterized with Series Equivalent Large-Signal Impedance Parameters; (7)Low Gold Plating Thickness on Leads, 40 Nominal; (8)RoHS Compliant; (9)In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.

The absolute maximum ratings of MRF19045 are:(1)Drain-Source Voltage:-0.5V to +65V; (2)Gate-Source Voltage:-0.5V to +15V; (3)Total Device Dissipation @ TC = 25°C:105W, Derate above 25°C..0.60W/°C; (4)Storage Temperature Range:- 65°C to +150 °C; (5)Case Operating Temperature:150 °C; (6)Operating Junction Temperature:200 °C.

The electrical characteristics of the MRF19045 are:(1)Drain-Source Breakdown Voltage(VGS = 0 Vdc, ID = 100 Adc):65V; (2)Zero Gate Voltage Drain Leakage Current(VDS = 26V, VGS = 0V):10uA; (3)Gate-Source Leakage Current(VGS = 5V, VDS = 0V):1uA; (4)Gate Threshold Voltage(VDS = 10V, ID = 100A):2V to 4V; (5)Gate Quiescent Voltage(VDD = 26V, ID = 550mA):3V to 5V; (6)Drain-Source On-Voltage(VGS = 10V, ID = 1A):0.19V to 0.21V; (7)Reverse Transfer Capacitance(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz):1.8pF.

If you want to know more information such as the electrical characteristics about the MRF19045, please download the datasheet in www.seekic.com or www.chinaicmart.com .