MRF20060R

The MRF20060R is RF power bipolar transistor. It is designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. It is suitable for frequency modulated, amplitude modulated and multicarrier base station RF power amplifiers.

The features of MRF20060R can be summarized as:(1)Guaranteed Two-tone Performance at 2000 MHz, 26 Volts:Output Power---60 Watts (PEP),Power Gain--9 dB,Efficienc--33%, Intermodulation Distortion--30 dBc; (2)Characterized with Series Equivalent Large-Signal Impedance Parameters; (3)S-Parameter Characterization at High Bias Levels; (4)Excellent Thermal Stability; (5)Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 60 Watts (PEP)Output Power; (6)Designed for FM, TDMA, CDMA and Multi-Carrier Applications.Note: Not suitable for class A operation.

The absolute maximum ratings of MRF20060R are:(1)CollectorEmitter Voltage (IB = 0 mA):25 Vdc; (2)CollectorEmitter Voltage:60 Vdc; (3)CollectorBase Voltage:60 Vdc; (4)CollectorEmitter Voltage (RBE = 100 Ohm):30 Vdc; (5)BaseEmitter Voltage: 3 Vdc; (6)Collector Current Continuous:8 Adc; (7)Total Device Dissipation @ TC = 25°C..250W, Derate above 25°C..1.43W/°C; (8)Storage Temperature Range: 65°C to +150 °C; (9)Operating Junction Temperature:200 °C.

If you want to know more information such as the electrical characteristics about the MRF20060R, please download the datasheet in www.seekic.com or www.chinaicmart.com .