MRF21010-1

The MRF21010-1 is N-Channel Enhancement -Mode Lateral MOSFET. It is designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. It is suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

The features of MRF21010-1 can be summarized as:(1)High Gain, High Efficiency and High Linearity; (2)Integrated ESD Protection; (3)Designed for Maximum Gain and Insertion Phase Flatness; (4)Excellent Thermal Stability; (5)Characterized with Series Equivalent Large-Signal Impedance Parameters; (6)Low Gold Plating Thickness on Leads. L Suffix Indicates 40Nominal; (7)RoHS Compliant; (8)In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.

The absolute maximum ratings of MRF21010-1 are:(1)Drain-Source Voltage:-0.5V to +65V; (2)Gate-Source Voltage:-0.5V to +15V; (3)Total Device Dissipation @ TC = 25°C:43.75W, Derate above 25°C..0.25W/°C; (4)Storage Temperature Range:- 65°C to +150 °C; (5)Case Operating Temperature:150 °C; (6)Operating Junction Temperature:200 °C.

The electrical characteristics of the MRF21010-1 are:(1)Drain-source breakdown voltage (VDS = 0V, ID = 10uA):65V; (2)Zero Gate Voltage Drain Leakage Current(VDS = 28V, VGS = 0V):10uA; (3)Gate-Source Leakage Current(VGS = 5V, VDS = 0V):1uA; (4)Gate Threshold Voltage(VDS = 10V, ID = 50A):2.5V to 4V; (5)Gate Quiescent Voltage(VDD = 28V, ID = 100mA):2.5V to 4.5V; (6)Drain-Source On-Voltage(VGS = 10V, ID = 0.5A):0.4V to 0.5V; (7)Reverse Transfer Capacitance(VDS = 28V, VGS = 0V, f=1MHz):1pF.

If you want to know more information such as the electrical characteristics about the MRF21010-1, please download the datasheet in www.seekic.com or www.chinaicmart.com .