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MRF21010LSR1 Maximum Ratings

Rating Symbol Value Unit
Drain-Source Voltage VDSS 65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 43.75
0.25
Watts
W/°C
Storage Temperature Range Tstg -65 to +150 °C
Operating Junction Temperature TJ 200 °C

MRF21010LSR1 Typical Application

Typical W-CDMA Performance: -45 dBc ACPR, 2140 MHz, 28 Volts,
   5 MHz Offset/4.096 MHz BW, 15 DTCH
   Output Power ó 2.1 Watts
   Power Gain ó 13.5 dB
   Efficiency ó 21%
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHz,10 Watts CW Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal.

MRF21010LSR1 Connection Diagram

MRF21010LSR1  Connection Diagram

MRF21010LSR1 datasheet

MRF21010LSR1
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