MRF21010LSR1 Selling Leads, Price trend , Freescale Semiconductor, MRF21010LSR1 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00220503 Detail

MRF21010LSR1: Transistors RF MOSFET Power 10W 28V 2.1 GHZ LDMOS

MRF21010LSR1 Data Sheet

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Part Number:: MRF21010LSR1
Mfg:: Freescale Semiconductor
Supply Ability:: 5000

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Upload time: 2026/1/27

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Product Details

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Configuration :	Single	Transistor Polarity :	N-Channel
Frequency :	2.1 GHz	Gain :	13.5 dB
Output Power :	2.1 W	Drain-Source Breakdown Voltage :	65 V
Gate-Source Breakdown Voltage :	- 0.5 V, + 15 V	Maximum Operating Temperature :	+ 150 C
Package / Case :	NI-360S-3	Packaging :	Reel

Description

Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Drain-Source Breakdown Voltage : 65 V
Gain : 13.5 dB
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V
Frequency : 2.1 GHz
Package / Case : NI-360S-3
Output Power : 2.1 W

Application

Typical W-CDMA Performance: -45 dBc ACPR, 2140 MHz, 28 Volts,
   5 MHz Offset/4.096 MHz BW, 15 DTCH
   Output Power ó 2.1 Watts
   Power Gain ó 13.5 dB
   Efficiency ó 21%
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHz,10 Watts CW Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal.

Pinout

Connection Diagram

Specifications

Rating	Symbol	Value	Unit
Drain-Source Voltage	V_DSS	65	Vdc
Gate-Source Voltage	V_GS	-0.5, +15	Vdc
Total Device Dissipation @ TC = 25°C Derate above 25°C	P_D	43.75 0.25	Watts W/°C
Storage Temperature Range	T_stg	-65 to +150	°C
Operating Junction Temperature	T_J	200	°C

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MRF21010LSR1

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