MRF21030

The MRF21030 is designed as RF power field effect transistors of N-channel enhancement-mode lateral MOSFETs for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.

It has nine features. (1) Wideband CDMA performance: -45 dB ACPR @ 4.096MHz, 28Volts, output power 3.5Watts, power gain 14dB, efficiency 15%. (2) High gain, high efficiency and high linearity. (3) Integrated ESD protection. (4) Designed for maximum gain and insertion phase flatness. (5) Capable of handling 10:1 VSWR, @ 28 Vdc, 2.11GHz, 30Watts CW output power. (6) Excellent thermal stability. (7) Characterized with series equivalent large-signal impedance parameters. (8) Low gold plating thickness on leads, 40'' nominal. (9) In tape and reel. R3 suffix = 250 units per 32mm, 13 inch reel. That are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1) Its drain to source voltage would be 65V. (2) Its gate to source voltage would be +15Vdc, -0.5Vdc. (3) Its total device dissipation would be 83.3W at 25°C and would be 0.48W/°C for derate above 25°C. (4) Its storage temperature range would be from -65°C to +150°C. (5) Its operating junction temperature would be 200°C.

Also some electrical characteristics about it. (1) Its drain to source breakdown voltage would be min 65V. (2) Its gate to source leakage current would be max 1uAdc. (3) Its zero gate voltage drain leakage current would be max 1uAdc. (4) Its forward transconductance would be typ 2S. (5) Its gate threshold voltage would be min 2Vdc and max 4Vdc. (6) Its gate quiescent voltage would be min 2Vdc and typ 3.3Vdc and max 4.5Vdc. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!