Purchase MRF21045LSR3, In-stock MRF21045LSR3 From SeekIC.
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MRF21045LSR3
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DataSheet
General Description
MRF21045LSR3 Maximum Ratings
| Rating | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | 65 | Vdc |
| Gate-Source Voltage | VGS | -0.5, +15 | Vdc |
| Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD | 105 0.60 |
Watts W/°C |
| Storage Temperature Range | Tstg | -65 to +150 | °C |
| Operating Junction Temperature | TJ | 200 | °C |
MRF21045LSR3 Typical Application
Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA,
f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,
Adjacent Channels measured over 3.84 MHz Bandwidth at f1 -5 MHz
and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth
at f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Output Power ó 10 Watts Avg.
Efficiency ó 23.5%
Gain ó 15 dB
IM3 ó -37.5 dBc
ACPR ó -41 dBc
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Low Gold Plating Thickness on Leads, 40 Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,
Adjacent Channels measured over 3.84 MHz Bandwidth at f1 -5 MHz
and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth
at f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Output Power ó 10 Watts Avg.
Efficiency ó 23.5%
Gain ó 15 dB
IM3 ó -37.5 dBc
ACPR ó -41 dBc
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Low Gold Plating Thickness on Leads, 40 Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MRF21045LSR3 Connection Diagram
MRF21045LSR3
PDF/DataSheet Download
- Datasheet: MRF21045LSR3
- File Size: 563375 KB
- Manufacturer: MOTOROLA [Motorola, Inc]
- Click here to Download
- ·MRF01-J-178
- HIROSE [Hirose Electric]
- Push-On Coaxial Connectors (PC Card Type 2 Mountable)
- 108632 KB
- ·MRF01J-HRMJ
- HIROSE [Hirose Electric]
- Push-On Coaxial Connectors (PC Card Type 2 Mountable)
- 108632 KB
- ·MRF01P-HRMJ
- HIROSE [Hirose Electric]
- Push-On Coaxial Connectors (PC Card Type 2 Mountable)
- 108632 KB
- ·MRF01-PR-1
- HIROSE [Hirose Electric]
- Push-On Coaxial Connectors (PC Card Type 2 Mountable)
- 108632 KB
- ·MRF01-PR-178
- HIROSE [Hirose Electric]
- Push-On Coaxial Connectors (PC Card Type 2 Mountable)
- 108632 KB
- ·MRF01-R-1
- HIROSE [Hirose Electric]
- Push-On Coaxial Connectors (PC Card Type 2 Mountable)
- 108632 KB
- ·MRF01-R-178
- HIROSE [Hirose Electric]
- Push-On Coaxial Connectors (PC Card Type 2 Mountable)
- 108632 KB
- ·MRF03
- HIROSE [Hirose Electric]
- SMT Low-Profile Coaxial Multiple Contact Connectors
- 271264 KB
MRF21045LSR3 Relative Products
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The MRF21045LS has ten features.(1)typical 2-carrier W-CDMA performance for VDD = 28 volts, IDQ = 500 mA,f1 = 2135 MHz, f2 = 2145 MHz,channel bandwidth = 3.84 MHz,adjacent channels measured over 3.84 MHz bandwidth at f1 -5 MHz and f2 +5 MHz, distortion produ...
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MRF21045L
The MRF21045L is designed as RF power field effect transistors of N-channel enhancement-mode lateral MOSFETs for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be u...
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The MRF21045 is designed as RF power field effect transistors of N-channel enhancement-mode lateral MOSFETs for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be us...
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