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Part Number: MRF21125S

 

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MRF21125S Maximum Ratings

Rating Symbol Value Unit
Drain-Source Voltage VDSS 65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 330
1.89
Watts
W/°C
Storage Temperature Range Tstg -65 to +150 °C
Operating Junction Temperature TJ 200 °C

MRF21125S Typical Application

Typical 2carrier WCDMA Performance for VDD = 28 Volts, IDQ = 1600
   mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz,
   adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHz
   bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.
   Output Power - 20 Watts
   Efficiency - 18%
   Gain - 13 dB
   IM3 - 43 dBc
   ACPR - 45 dBc
100% Tested under 2carrier WCDMA
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 125 Watts (CW) Output Power
Excellent Thermal Stability
Characterized with Series Equivalent LargeSignal Impedance Parameters
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MRF21125S Connection Diagram

MRF21125S  Connection Diagram

MRF21125S datasheet

MRF21125S
PDF/DataSheet Download

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