MRF21180

The MRF21180 is designed as RF power field effect transistors of N-channel enhancement-mode lateral MOSFETs for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.

It has ten features. (1) Typical 2-carrier W-CDMA performance for Vdd=28Volts, IDQ= 2x850mA, f1=2135MHz, f2=2145MHz, channel bandwidth=3.84MHz, adjacent channels measured over 3.84MHz bandwidth at f1-5MHz and f2+5MHz, distortion products measured over a 3.84MHz bandwidth at f1-10MHz and f2+10MHz, each carrier peak/avg. =8.3dB at 0.01% probability on CCDF. (2) Internally input and output matched, for ease of use. (3) High gain, high efficiency and high linearity. (4) Integrated ESD protection. (5) Designed for maximum gain and insertion phase flatness. (6) Capable of handling 5:1 VSWR, at 28Vdc, 2.11GHz, 170watts CW output power. (7) Excellent thermal stability. (8) Characterized with series equivalent large-signal impedance parameters. (9) In tape and reel. R6 suffix = 150 units per 56mm, 13 inch reel. That are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1) Its drain to source voltage would be 65V. (2) Its gate to source voltage would be +15Vdc, -0.5Vdc. (3) Its total device dissipation would be 380W at 25°C and would be 2.17W/°C for derate above 25°C. (4) Its storage temperature range would be from -65°C to +150°C. (5) Its operating junction temperature would be 200°C.

Also some electrical characteristics about it. (1) Its drain to source breakdown voltage would be min 65V. (2) Its gate to source leakage current would be max 1uAdc. (3) Its zero gate voltage drain leakage current would be max 10uAdc. (4) Its forward transconductance would be typ 6S. (5) Its gate threshold voltage would be min 2Vdc and max 4Vdc. (6) Its gate quiescent voltage would be min 3Vdc and typ 3.9Vdc and max 5Vdc. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!