MRF248

The MRF248 is a kind of NPN silicon RF power transistor. The device is designed for 12.5 V VHF large-signal power amplifier applications required in commercial and industrial equipment operating to 175 MHz. There are some features as follows: (1)typical 12.5 V, 175 MHz characteristics in broadband circuit: output power=80 W, gain=11.3 dB, efficiency=59%; (2)characterized with series equivalent large-signal impedance parameters; (3)internal matching network optimized for broadband operation; (4)ion implanted emitter ballast resistors for improved load mismatch capability at elevated drive and voltage.

What comes next is about the absolute maximum ratings of MRF248: (1)collector to base voltage, VCBO: 38 V; (2)collector to emitter voltage, VCEO: 16.5 V; (3)emitter to base voltage, VEBO: 4.0 V; (4)collector current, IC: 15 A; (5)total device dissipation, PD: 250 W at TA=25; (6)storage temperature, Tstg: -65 to +150; (7)junction temperature, TJ: 200.

The following is about the electrical characteristics (TC=25 unless otherwise noted) of MRF248: (1)collector-base breakdown voltage, V(BR)CEO: 16.5 V min at IC=50 mA, IB=0; (2)collector-emitter breakdown voltage, V(BR)CES: 38 V min at IC=50 mA, VBE=0; (3)emitter-base breakdown voltage, V(BR)EBO: 4.0 V min at IE=5 mA, IC=0; (4)collector cutoff current, ICES: 10 mA max at VCE=15 V, VBE=0; (5)DC current gain, hFE: 20 min and 120 max at VCE=5 V, IC=2 A; (6)output capacitance, Cob: 270 pF typ and 350 pF max at VCB=12.5 V, f=1 MHz, IE=0; (7)common-emitter amplifier power gain, GPE: 10 dB min and 11.3 dB typ at Pout=80 W, VCC=12.5 V, f=175 MHz; (8)collector efficiency, C: 50% min and 59% typ at Pout=80 W, VCC=12.5 V, f=175 MHz.