MRF282SR1

Series: -
Noise Figure: -
Packaging: Tape & Reel (TR)
Frequency: 2GHz
Transistor Type: LDMOS
Voltage - Test: 26V
Voltage - Rated: 65V
Gain: 11.5dB
Manufacturer: Freescale Semiconductor
Power - Output: 10W
Current Rating: 1µA
Current - Test: 75mA
Package / Case: NI-200S
Supplier Device Package: NI-200S


Description

The MRF282SR1 is a type of RF power field effect transistors, which is Designed for Class A and Class AB PCN and PCS base station applications with frequencies can reach 2600 MHz. ideal for FM, TDMA, CDMA, and multicarrier amp lifier applications.

Features of the MRF282SR1 are:(1)excellent thermal stability;(2)characterized with series equivalent large-signal;(3)RoHS compliant;(4)available in tape and reel. r1 suffix is 500 units per 12 mm, 7 inch reel.

The absolute maximum ratings and electrical characterstics(TC = 25°C unless otherwise noted) of the MRF282SR1 can be summarized as:(1):drain-source voltage is -0.5Vdc to +65 Vdc;(2):gate-source voltage is±20 Vdc;(3):total de vice dissipation at TC = 25°C is 60 W;(4):storage temperature ranges from-65°C to +150 °C;(5):case operating temperature is 150 °C;(6):operating junction temperature is 200 °C.Electrical characterstics:(1):drain-source break down voltage is 65 Vdc min when VGS is 0 and ID is 10 Adc;(2)zero gate voltage drain current is 1.0 Adc max whe n VDS is 28 Vdc and VGS is 0;(3):gate-source leakage current is 1.0 Adc max when VGS is 20 Vdc and VDS is 0;(4): gate threshold voltage is 2.0Vdc min,3.0 Vdc typ and 4.0 Vdc max when VDS is 10 Vdc and ID is 50 Adc;(5):input capacitance is 15 pF when VDS is 26 Vdc, VGS is 0 and f is 1.0 MHz;(6):drain efficiency is 28% min(VDD = 26 Vdc, Po ut = 10 W PEP, IDQ = 75 mA,f1 = 2000.0 MHz, f2 = 2000.1 MHz);(7):common-source power gain is 10.5 dB min and 11.5 dB typ(VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA,f1 = 1930.0 MHz, f2 = 1930.1 MHz).