MRF377H

The MRF377H is designed as one kind of RF power filed effect transistors (N-channel enhancement-mode lateral MOSFETs) that designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier applications in 26 volt base station equipment.

Features of the MRF377H are:(1)typical two-tone performance at 945 MHz, 26 volts:output power--30 watts PEP, power gain--19 dB, efficiency--41.5% and IMD-- -32.5 dBc;(2)integrated ESD protection;(3)designed for maximum gain and insertion phase flatness;(4)capable of handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 watts CW output power;(5)excellent thermal stability;(6)characterized with series equivalent largesignal impedance Parameters;(7)in tape and reel. R1 suffix = 500 units per 32 mm, 13 inch reel.

The absolute maximum ratings of the MRF377H can be summarized as:(1)drainsource voltage:68 Vdc;(2)gatesource voltage:-0.5 to +15 Vdc;(3)total device dissipation @ Tc=25°C:117 watts;(4)storage temperature range:-65 to +200 °C;(5)operating junction temperature:200 °C;(6)human body model:1 (minimum);(7)machine model:M1 (minimum). If you want to know more information such as the electrical characteristics about the MRF377H, please download the datasheet in www.seekic.com or www.chinaicmart.com .