MRF521

The MRF521 is a kind of PNP silicon high-frequency transistor. It is designed primarily for use in the high-gain, low-noise small-signal amplifiers for operation up to 3.5 GHz. Besides, it is widely used in applications requiring fast switching times.

There are some features as follows: (1)high current gain-bandwidth product: fT=4.2 GHz (typ) @ IC=50 mAdc; (2)low noise figure @ f=1 GHz: NF(matched)=2.8 dB (typ); (3)guranteed RF parameters; (4)surface mounted SOT-143 offers improved RF performance: low package parasitics and higher gain; (5)available in both standard profile (MRF5211) and low profile (MRF5211L); (6)tape and reel packaging options.

The following is about the maximum ratings of MRF521: (1)collector-emitter voltage, VCEO: 10 Vdc; (2)collector-base voltage, VCBO: 10 Vdc; (3)emitter-base voltage, VEBO: 2.5 Vdc; (4)maximum junction temperature, TJmax: 200; (5)collector current continuous, IC: 50 mA; (6)total device dissipation @ TC=75, PD: 0.75 W; (7)storage temperature, Tstg: -65 to +200.