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Part Number: MRF5211LT1

 

MFG: N/A

 

 

Description: Designed primarily for use in the highgain, lownoise smallsignal amplifiers for operation up to 3.5 GHz. Also usable in...


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MRF5211LT1 General Description


Designed primarily for use in the highgain, lownoise smallsignal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching times.

MRF5211LT1 Maximum Ratings

Ratings Symbol Value Unit
CollectorEmitter Voltage VCEO -10 Vdc
CollectorBase Voltage VCBO -20 Vdc
EmitterBase Voltage VEBO -2.5 Vdc
Power Dissipation (1) TC = 75 °C,
Derate linearly above TC = 75 °C @ All
PD(max) 0.333
4.44
W
mW/°C
Collector Current - Continuous IC 70 mA
Maximum Junction Temperature TJmax 150 °C
Storage Temperature All Tstg 55 to +150 °C

MRF5211LT1 Features

* High Current GainBandwidth Product -
-f = 3.4 GHz (Typ) @ IC  = 35 mAdc (MMBR521LT1)
-f = 4.2 GHz (Typ) @ I C = 50 mAdc (MRF5211LT1)
* Low Noise Figure @ f = 1.0 GHz -
-NF  = 2.5 dB (Typ) (MMBR521LT1)(matched)
-NF  = 2.8 dB (Typ) (MRF5211LT1)(matched)
* High Power Gain - Gpe (matched) = 11 dB (Typ)
* Guaranteed RF Parameters
* Surface Mounted SOT23 (MMBR521LT1) & SOT143 (MRF5211LT1) Offer Improved RF Performance
-Lower Package Parasitics
-Higher Gain
* Available in tape and reel packaging options:T1 suffix = 3,000 units per reel

MRF5211LT1 datasheet

MRF5211LT1
PDF/DataSheet Download

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