MRF5211LT1

Features: * High Current GainBandwidth Product --fT = 3.4 GHz (Typ) @ IC = 35 mAdc (MMBR521LT1)-fT = 4.2 GHz (Typ) @ IC = 50 mAdc (MRF5211LT1)* Low Noise Figure @ f = 1.0 GHz --NF = 2.5 dB (Typ) (MMBR521LT1)(matched)-NF = 2.8 dB (Typ) (MRF5211LT1)(matched)* High Power Gain - Gpe (matched) = 11 dB ...

product image

MRF5211LT1 Picture
SeekIC No. : 004426998 Detail

MRF5211LT1: Features: * High Current GainBandwidth Product --fT = 3.4 GHz (Typ) @ IC = 35 mAdc (MMBR521LT1)-fT = 4.2 GHz (Typ) @ IC = 50 mAdc (MRF5211LT1)* Low Noise Figure @ f = 1.0 GHz --NF = 2.5 dB (Typ) (MM...

floor Price/Ceiling Price

Part Number:
MRF5211LT1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/23

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

* High Current GainBandwidth Product -
-f = 3.4 GHz (Typ) @ IC  = 35 mAdc (MMBR521LT1)
-f = 4.2 GHz (Typ) @ I C = 50 mAdc (MRF5211LT1)
* Low Noise Figure @ f = 1.0 GHz -
-NF  = 2.5 dB (Typ) (MMBR521LT1)(matched)
-NF  = 2.8 dB (Typ) (MRF5211LT1)(matched)
* High Power Gain - Gpe (matched) = 11 dB (Typ)
* Guaranteed RF Parameters
* Surface Mounted SOT23 (MMBR521LT1) & SOT143 (MRF5211LT1) Offer Improved RF Performance
-Lower Package Parasitics
-Higher Gain
* Available in tape and reel packaging options:T1 suffix = 3,000 units per reel




Specifications

Ratings Symbol Value Unit
CollectorEmitter Voltage VCEO -10 Vdc
CollectorBase Voltage VCBO -20 Vdc
EmitterBase Voltage VEBO -2.5 Vdc
Power Dissipation (1) TC = 75 °C,
Derate linearly above TC = 75 °C @ All
PD(max) 0.333
4.44
W
mW/°C
Collector Current - Continuous IC 70 mA
Maximum Junction Temperature TJmax 150 °C
Storage Temperature All Tstg 55 to +150 °C



Description

MRF5211LT1 is Designed primarily for use in the highgain, lownoise smallsignal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching times.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Semiconductor Modules
Crystals and Oscillators
Industrial Controls, Meters
Prototyping Products
DE1
View more