MRF581A, US $ .9-1.35 , Advanced Semiconductor, Inc., MRF581A DataSheet download, circuit diagram from SeekIC.com

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MRF581A: Transistors RF Bipolar Small Signal RF Transistor

MRF581A Data Sheet

US $ .9~1.35 / Piece | Get Latest Price

Part Number:: MRF581A
Mfg:: Advanced Semiconductor, Inc.
Supply Ability:: 5000

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Upload time: 2024/4/26

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Product Details

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Transistor Polarity :	NPN	Maximum Operating Frequency :	1 GHz
Collector- Emitter Voltage VCEO Max :	15 V	Emitter- Base Voltage VEBO :	2.5 V
Continuous Collector Current :	200 mA	Power Dissipation :	1.25 W
Maximum Operating Temperature :	+ 150 C	Package / Case :	Macro-X
Packaging :	Tray

Description

Configuration :
Transistor Polarity : NPN
Emitter- Base Voltage VEBO : 2.5 V
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 15 V
Maximum Operating Frequency : 1 GHz
Continuous Collector Current : 200 mA
Power Dissipation : 1.25 W
Packaging : Tray
Package / Case : Macro-X

Features:

· Low Noise - 2.5 dB @ 500 MHZ
· High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
· Ftau - 5.0 GHz @ 10v, 75mA
· Cost Effective MacroX Package

Specifications

Symbol	Characteristic	MRF581	MRF581A	Unit
V_CEO	Collector-Emitter voltage	18	15	Vdc
V_CBO	Collector-Base voltage	30		Vdc
V_EBO	Emitter-Base Voltage	2.5		Vdc
I_C	Collector Current	200		mA

Description

MRF581A is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

Parameters:

Technical/Catalog Information	MRF581A
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Frequency - Transition	5GHz
Noise Figure (dB Typ @ f)	3dB ~ 3.5dB @ 500MHz
Current - Collector (Ic) (Max)	200mA
DC Current Gain (hFE) (Min) @ Ic, Vce	90 @ 50mA, 5V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Gain	13dB ~ 15.5dB
Power - Max	2.5W
Compression Point (P1dB)	-
Package / Case	*
Packaging	*
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MRF581A MRF581A MRF581AMI ND MRF581AMIND MRF581AMI

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MRF581A

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