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MRF5P21180HR5

Transistors RF MOSFET Power HV5 38W WCDMA NI1230H

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MRF5P21180HR5: Transistors RF MOSFET Power HV5 38W WCDMA NI1230H

MRF5P21180HR5 Data Sheet

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Part Number:
MRF5P21180HR5
Mfg:
Freescale Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Dual Transistor Polarity : N-Channel
Frequency : 2.11 GHz to 2.17 GHz Gain : 14 dB
Output Power : 38 W Drain-Source Breakdown Voltage : 65 V
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V Maximum Operating Temperature : + 150 C
Package / Case : NI-1230-5 Packaging : Reel    

Description

Continuous Drain Current :
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Configuration : Dual
Drain-Source Breakdown Voltage : 65 V
Gain : 14 dB
Frequency : 2.11 GHz to 2.17 GHz
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V
Package / Case : NI-1230-5
Output Power : 38 W


Parameters:

Technical/Catalog InformationMRF5P21180HR5
VendorFreescale Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package NameNI-1230
FET TypeN-Channel
Typical RF ApplicationCDMA
Typical RF ApplicationTDMA
Drain to Source Voltage (Vdss)28.0 V [Nom]
Voltage Gate to Source (Vgs)3.6 V [Max]
Power Dissipation530.000 W [Max]
PackagingTape & Reel, 13"
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF5P21180HR5
MRF5P21180HR5



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