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MRF5S21150SR3

Features: • Typical 2 - carrier W-CDMA Performance for VDD = 28 Volts,IDQ = 1300 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 -10 MHz and f2 +10 MHz,...

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MRF5S21150SR3: Features: • Typical 2 - carrier W-CDMA Performance for VDD = 28 Volts,IDQ = 1300 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f...

MRF5S21150SR3 Data Sheet

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Part Number:
MRF5S21150SR3
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Typical 2 - carrier W-CDMA Performance for VDD = 28 Volts,
   IDQ = 1300 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
   3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz
   and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
   @ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
        Output Power- 33 Watts Avg.
        Power Gain - 12.5 dB
        Efficiency - 25%
        IM3 - -37 dBc
        ACPR - -39 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Qualified Up to a Maximum of 32 VDD Operation
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.


Specifications

Rating Symbol Value Unit
DrainSource Voltage VDSS 65 Vdc
GateSource Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
           Derate above 25°C		 PD 367
2.1		 Watts
W/°C
Storage Temperature Range Tstg −65 to +150 °C
Operating Junction Temperature TJ 200 °C
CW Operation CW 125 Watts



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