MRF6S21100NR1

Transistors RF MOSFET Power 2170MHZ 23W

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SeekIC No. : 00220509 Detail

MRF6S21100NR1: Transistors RF MOSFET Power 2170MHZ 23W

floor Price/Ceiling Price

Part Number:
MRF6S21100NR1
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/5/14

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Product Details

Quick Details

Configuration : Single Dual Drain Dual Gate Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 68 V Gate-Source Breakdown Voltage : - 0.5 V, 12 V
Maximum Operating Temperature : + 150 C Package / Case : TO-270 WB EP
Packaging : Reel    

Description

Frequency :
Gain :
Output Power :
Continuous Drain Current :
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Configuration : Single Dual Drain Dual Gate
Gate-Source Breakdown Voltage : - 0.5 V, 12 V
Drain-Source Breakdown Voltage : 68 V
Package / Case : TO-270 WB EP


Specifications

Rating
Symbol
Value
Unit
Drain−Source Voltage
VDSS
−0.5, +68
Vdc
Gate−Source Voltage
VGS
−0.5, +12
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
307
1.75
W
W/°C
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature
TJ
200
°C



Parameters:

Technical/Catalog InformationMRF6S21100NR1
VendorFreescale Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel
Voltage - Rated 28V
Current Rating950mA
Package / CaseTO-270-4
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF6S21100NR1
MRF6S21100NR1



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