Transistors RF MOSFET Power HV6 LDMOS 30W NI880H
MRF6S21140HR5: Transistors RF MOSFET Power HV6 LDMOS 30W NI880H
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| Configuration : | Single | Transistor Polarity : | N-Channel |
| Drain-Source Breakdown Voltage : | 68 V | Gate-Source Breakdown Voltage : | - 0.5 V, 12 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | NI-880 |
| Packaging : | Reel |
| Technical/Catalog Information | MRF6S21140HR5 |
| Vendor | Freescale Semiconductor |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Surface (SMD, SMT) |
| Package Name | NI-880 |
| FET Type | N-Channel |
| Typical RF Application | CDMA |
| Typical RF Application | TDMA |
| Drain to Source Voltage (Vdss) | 28.0 V [Nom] |
| Power Dissipation | 30.000 W [Max] |
| Packaging | Tape & Reel, 13" |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MRF6S21140HR5 MRF6S21140HR5 |