Transistors RF MOSFET Power HV6 2.1GHZ 54W NI880S
MRF6S21190HSR5: Transistors RF MOSFET Power HV6 2.1GHZ 54W NI880S
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| Configuration : | Single | Transistor Polarity : | N-Channel |
| Drain-Source Breakdown Voltage : | 68 V | Gate-Source Breakdown Voltage : | - 0.5 V, 12 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | NI-880S |
| Packaging : | Reel |