Transistors RF MOSFET Power VHV6 10W PULSE PLD1.5
MRF6V10010NR4: Transistors RF MOSFET Power VHV6 10W PULSE PLD1.5
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| Configuration : | Single Dual Source | Transistor Polarity : | N-Channel |
| Drain-Source Breakdown Voltage : | 100 V | Gate-Source Breakdown Voltage : | - 6 V, 10 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | PLD-1.5 |
| Packaging : | Reel |
| Technical/Catalog Information | MRF6V10010NR4 |
| Vendor | Freescale Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Transistor Type | N-Channel |
| Voltage - Rated | 50V |
| Current Rating | 10mA |
| Package / Case | PLD-1.5 |
| Packaging | Digi-Reel? |
| Drawing Number | 375; 466-03 ; NR; 4 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MRF6V10010NR4 MRF6V10010NR4 MRF6V10010NR4DKR ND MRF6V10010NR4DKRND MRF6V10010NR4DKR |