Transistors RF MOSFET Power VHV6 250W 50V NI780H
MRF6V12250HR3: Transistors RF MOSFET Power VHV6 250W 50V NI780H
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Configuration : | Single | Transistor Polarity : | N-Channel |
Drain-Source Breakdown Voltage : | 100 V | Gate-Source Breakdown Voltage : | - 6 V, 10 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | Case 465-06 |
Packaging : | Reel |