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Part Number: MRF9080LSR3

 

 

 

 

Description: Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for l...


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MRF9080LSR3 General Description


Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier applications in 26 volt base station equipment.

MRF9080LSR3 Maximum Ratings

Rating Symbol Value Unit
Drain-Source Voltage VDSS 65 Vdc
Gate-Source Voltage VGS - 0.5, +15 Vdc
Total Device Dissipation @ TC = 25
Derate above 25
PD 250
1.43
Watts
W/
Storage Temperature Range Tstg - 65 to +200
Operating Junction Temperature TJ 200

MRF9080LSR3 Features

• Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts
        Output Power @ P1db: 75 Watts
        Power Gain @ P1db: 18.5 dB
        Efficiency @ P1db: 55%
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent LargeSignal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ Nominal.

MRF9080LSR3 datasheet

MRF9080LSR3
PDF/DataSheet Download

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