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MRF9100R3

Features: • OnDie Integrated Input Match• Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts Output Power, P1dB - 110 Watts (Typ) Power Gain @ P1dB - 16.5 dB (Typ) Efficiency @ P1dB - 53% (Typ)• Integrated ESD Protection• Designed for Maximum Gain and Insertion P...

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SeekIC No. : 004427082 Detail

MRF9100R3: Features: • OnDie Integrated Input Match• Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts Output Power, P1dB - 110 Watts (Typ) Power Gain @ P1dB - 16.5 dB (Typ) Efficiency ...

MRF9100R3 Data Sheet

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Part Number:
MRF9100R3
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/18

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Product Details

Description



Features:

• OnDie Integrated Input Match
• Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts
        Output Power, P1dB - 110 Watts (Typ)
        Power Gain @ P1dB - 16.5 dB (Typ)
        Efficiency @ P1dB - 53% (Typ)
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 100 Watts (CW) Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent LargeSignal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.


Specifications

Rating Symbol Value Unit
DrainSource Voltage VDSS
 65 Vdc
GateSource Voltage VGS - 0.5,+15 Vdc
Total Device Dissipation @ TC = 25
Derate above 25 		PD 175
1.0		 Watts
W/
Storage Temperature Range Tstg 65 to +200
Operating Junction Temperature TJ 200



Description

MRF9100R3 is Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for largesignal, common source amplifier applications in 26 volt base station equipment.



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