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MRFG35003M6T1

MOSFET RF 3.5GHZ 3W 6V 1.5-PLD

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SeekIC No. : 003434920 Detail

MRFG35003M6T1: MOSFET RF 3.5GHZ 3W 6V 1.5-PLD

MRFG35003M6T1 Data Sheet

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Part Number:
MRFG35003M6T1
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Freescale Semiconductor
Continuous Collector Current : 5 mA Transistor Type: pHEMT FET
Frequency: 3.55GHz Gain: 9dB
Voltage - Test: 6V Current Rating: 2.9A
Noise Figure: - Current - Test: 180mA
Power - Output: 3W Voltage - Rated: 8V
Package / Case: PLD-1.5 Supplier Device Package: PLD-1.5    

Description

Series: -
Noise Figure: -
Packaging: Tape & Reel (TR)
Transistor Type: pHEMT FET
Gain: 9dB
Manufacturer: Freescale Semiconductor
Power - Output: 3W
Package / Case: PLD-1.5
Supplier Device Package: PLD-1.5
Voltage - Rated: 8V
Current - Test: 180mA
Frequency: 3.55GHz
Voltage - Test: 6V
Current Rating: 2.9A


Features:

• Typical WCDMA Performance: 42 dBc ACPR, 3.55 GHz, 6 Volts,
   IDQ = 180 mA
       Output Power - 450 mWatts
       Power Gain - 9 dB
       Efficiency - 24%
• 3 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.


Specifications

Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
8
Vdc
Total Device Dissipation @ TC = 25
Derate above 25
PD
22.7(2)
0.15(2)
Watts
W/
GateSource Voltage
VGS
5
Vdc
RF Input Power
Pin
24
dBm
Storage Temperature Range
Tstg
65 to +150
Channel Temperature(1)
Tch
175
Operating Case Temperature Range
TC
20 to +85



Description

MRFG35003M6T1 is Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in Class AB Customer Premise Equipment (CPE) applications.




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