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Part Number: MS2620

 

 

 

 

Description: The MS2620 device is a high power silicon bipolar NPN transistor specifically designed for medium puls...


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MS2620 General Description


The MS2620 device is a high power silicon bipolar NPN transistor specifically designed for medium pulse S-Band radar output and driver applications.

This device is characterized at 50 sec pulse width and 10% duty cycle, but is cable of operation over a range of pulse widths, duty cycles and temperatures, and can withstand a 3:1 output VSWR with a + 1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization and computerized automatic wire bonding techniques ensure high reliability and product consistancy (including phase characteristics).

The MS2620 is supplied in the BIGPACTM Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications.

MS2620 Maximum Ratings

Symbol
Parameter
Value
Unit
PDISS
Power Dissipation* (TC 75)
500
W
IC
Device Current*
16
A
VCC
Collector-Supply Voltage*
45
V
TJ
Junction Temperature(Pulsed RF Operation)
+200
TSTG
Storage Temperature
- 65 to + 200

MS2620 Features

· REFRACTORY/GOLD METALLIZATION
· EMITTER SITE BALLASTED
· LOW THERMAL RESISTANCE
· INPUT/OUTPUT MATCHING
· OVERLAY GEOMETRY
· METAL/CERAMIC HERMETIC PACKAGE
· POUT = 25 W MIN. WITH 7.0 dB GAIN

MS2620 Connection Diagram

MS2620  Connection Diagram

MS2620 datasheet

MS2620
PDF/DataSheet Download

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