MSB1218A-RT1

Maximum Operating Frequency :
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 45 V
Package / Case : SC-70
Maximum DC Collector Current : 0.1 A
Emitter- Base Voltage VEBO : 7 V
DC Collector/Base Gain hfe Min : 210 at 2 mA at 10 V


Features:

`High hFE, 210460
`Low VCE(sat), < 0.5 V
`Available in 8 mm, 7inch/3000 Unit Tape and Reel


Specifications

Rating	Symbol	Value	Unit
CollectorBase Voltage	V(BR)CBO	45	Vdc
CollectorEmitter Voltage	V(BR)CEO	45	Vdc
EmitterBase Voltage	V(BR)EBO	7.0	Vdc
Collector Current - Continuous	IC	100	mAdc
Collector Current - Peak	IC(P)	200	mAdc

Description

This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device MSB1218A-RT1 is housed in the SC70/SOT323 package which is designed for low power surface mount applications.

Parameters:

Technical/Catalog Information	MSB1218A-RT1
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	100mA
Power - Max	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce	210 @ 2mA, 10V
Vce Saturation (Max) @ Ib, Ic	500mV @ 10mA, 100mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	100A
Mounting Type	Surface Mount
Package / Case	SC-70-3, SOT-323-3
Packaging	Tape & Reel (TR)
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MSB1218A RT1 MSB1218ART1