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Part Number: MSC81450M

 

MFG: ASI

 

 

Description: The MSC81450M device is a high power pulsed transistor specifically designed for IFF avionics applicat...


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MSC81450M General Description


The MSC81450M device is a high power pulsed transistor specifically designed for IFF avionics applications.

This device is capable of withstanding a minimum 25:1 load mismatch at any phase angle under full rated conditions.

The MSC81450M is housed in the unique BIGPAC ™ package with internal input/output matching structures.

MSC81450M Maximum Ratings

Symbol Parameter
Value
Unit
PDISS Power Dissipation*
910
W
IC Device Current*
28
A
VCC Collector-Supply Voltage*
55
V
TJ Junction Temperature (Pulsed RF Operation)
250
TSTG Storage Temperature
- 65 to +200

MSC81450M Features

.REFRACTORY\GOLD METALLIZATION
.RUGGEDIZED VSWR 25:1
.INTERNAL INPUT/OUTPUT MATCHING
.LOW THERMAL RESISTANCE
.METAL/CERAMIC HERMETIC PACKAGE
·POUT = 450 W MIN. WITH 7.0 dB GAIN

MSC81450M datasheet

MSC81450M
PDF/DataSheet Download

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