MSC83303

Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 50°C) 10.0 W IC Device Current* 540 mA VCC Collector-Supply Voltage* 30 V TJ Junction Temperature 200 °C TSTG Storage Temperature - 65 to +200 ...

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SeekIC No. : 004428015 Detail

MSC83303: Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 50°C) 10.0 W IC Device Current* 540 mA VCC Collector-Supply Voltage* 30...

floor Price/Ceiling Price

Part Number:
MSC83303
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/1/27

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Product Details

Description



Specifications

Symbol
Parameter
Value
Unit
PDISS
Power Dissipation* (TC 50°C)
10.0
W
IC
Device Current*
540
mA
VCC
Collector-Supply Voltage*
30
V
TJ
Junction Temperature
200
°C
TSTG
Storage Temperature
- 65 to +200
°C



Description

The MSC83303 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC83303 is designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range.




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