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Part Number: MSC83305

 

MFG: ST

 

D/C: 01+

Description: The MSC83305 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an ...


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MSC83305 General Description


The MSC83305 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an emitter site ballasted geometry with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC83305 was designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range.

MSC83305 Maximum Ratings

Symbol
Parameter
Value
Unit
PDISS
Power Dissipation* (TC 50°C)
17.6
W
IC
Device Current*
700
mA
VCC
Collector-Supply Voltage*
30
V
TJ
 Junction Temperature
200
°C
TSTG
Storage Temperature
- 65 to +200
°C

MSC83305 datasheet

MSC83305
PDF/DataSheet Download

  • Datasheet: MSC83305
  • File Size: 126005 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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